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VERTICAL GaAs MESFET FOR SMART POWER SWITCHING APPLICATIONS
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Author(s) |
N. G. Wright; C. M. Johnson; A. G. O'Neill; M. Hossin |
Abstract |
A technologically feasible solution to the need for high-speed power switching
devices is presented. The paper details the design of a new GaAs MESFET device capable of operation at voltages up to 800V, currents up to lOA and switching frequencies in excess of 10 MHz. |
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Filename: | Unnamed file |
Filesize: | 288.7 KB |
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Type |
Members Only |
Date |
Last modified 2018-04-12 by System |
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