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INSULATED GATE BIPOLAR TRANSISTOR FAMILY
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| Author(s) |
Pierre Aloisi |
| Abstract |
switch characteristics must be adapted to the main application requirements: low on losses for a static switch and very fast devices for a switchmode power supply. It is very difficult to built one IGBT with physical characteristics which could fit all these applications. So it will be seen the main switch requirements and how the IGBT technology is split in some sub families taking the physical trade off into account. Oscillograms and results will be shown to sustain the technological choices. |
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| Filename: | Unnamed file |
| Filesize: | 302 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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