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THE INFLUENCE OF DEVICE PARAMETERS AND LOAD CONFIGURATIONS ON THE TURN-ON PERFORMANCE OF GATE TURN-OFF THYRISTORS
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| Author(s) |
M. J. Evans; F. J.Wakeman; P. A. Mawby |
| Abstract |
Comparisons are drawn between the turn-on characteristics of differing voltage grades in symmetrical and anode-shorted type Gate Turn-Off (GTO) thyristors. The influence of the load circuit on the current di/dt is shown to significantly influence the turn-on performance particularly when the voltage tail is considered. The contribution of the turn-on gate current is also considered. Numerical modelling of these devices is used to enhance these comparisons. |
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| Filename: | Unnamed file |
| Filesize: | 313.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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