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FAST POWER DIODES FABRICATED ON SILICON TO SILICON DIRECT BONDED (SDB) MATERIAL
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| Author(s) |
R. Wiget; M. Tzvetkova; E. P. Burte |
| Abstract |
Fast Hall- and SPEED diodes (Self Adjusting Emitter Efficiency-Diodes) were fabricated on SDB n+/n- substrate material and compared to those built on epitaxial material. Diodes on SDB-material proved to be superior to those on epitaxial silicon layers with respect to reverse recovery time, forward voltage drop and breakdown voltage. Switching behavior of pindiodes was controlled by high energy proton implantation (2.5 MeV). Proton implanted pindiodes were compared to diodes the reverse recovery time and the reverse current of which was reduced by changing the emitter efficiency (SPEED, pin). The dependence of proton implantation on switching behavior and I-V characteristics was investigated for pin and SPEED diodes. Yields of 40% and 90% for diodes on n+/n- epitaxial and SDB layers were achieved, respectevely. For SPEED-diodes with on-voltage comparable to pin diodes, smaller reverse recovery time t and reverse current Irm were obtained. The soft-factor of 1.5 of SPEED diodes reduces the reverse voltage for 20% in comparison to pin-diodes. Reverse recovery times of 70 ns at forward voltage drops of less than 5.2 V at a forward current of 140 A (10 mm2) were realized. |
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| Filename: | Unnamed file |
| Filesize: | 314.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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