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SHORT CIRCUIT RUGGEDNESS, SWITCHING, AND STATIONARY BEHAVIOUR OF NEW HIGH VOLTAGE IGBT IN MEASUREMENT AND SIMULATION
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| Author(s) |
Y. C. Gerstenmaier; G. J. E. Scheller; M. Hierholzer |
| Abstract |
Measurement and simulation results on newly developed high voltage (2.8 kV - 4
kV) insulated gate bipolar transistors (IGBT) will be presented. Stationary and switching behaviour and limits of short circuit ruggedness will be investigated by 2-D electrothermal simulation and are compared to measurements. The device failure mechanism under shortcircuit stress is analysed and shown how to avoid. An improved parameter set for impactionization
coefficients in numerical device simulation for stronger reduction of avalanche generation at high temperatures is proposed. |
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| Filename: | Unnamed file |
| Filesize: | 351.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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