| Abstract |
In this paper, both experimental and simulation results, showing the effects of Junction Temperature, Forward
Current and the Rate of fall of forward Current, or Commutating dildt on the reverse recovery behaviour of modem fast power PIN diodes are presented The main parameters used to characterize the reverse recovery performance of a semiconductor diode, are the reverse recovery charge, peak recovery current and reverse recovery time. The diode snappiness phenomenon due to a current chop-off during reverse recovery, was also investigated and linked with the above
parameters. |
