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The surface component of PN junction reverse current - A serious limitation for the operation of silicon power bipolar devices above 150-175°C.
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| Author(s) |
K.I. Nuttall; V.V.N. Obreja |
| Abstract |
This work investigates the contribution from surface leakage to the total reverse current in high voltage semiconductor diodes operating at high junction temperatures. Experimental results are presented for standard recovery and fast recovery rectifier diode dice at high temperature. An original experimental method able to reveal the influence of the surface component of the reverse current is described and has been applied. The work concludes that surface currents remain a significant component of the reverse leakage current in silicon power devices and can be an important factor that limits their maximum operating temperature. |
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| Filename: | EPE2003-PP0589 - Nuttall |
| Filesize: | 455.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-14 by Unknown |
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