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Suppression of conducted, high frequency signals in aerospace DC/AC converters designed with SiC MOSFETs
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| Author(s) |
Danil DROZHZHIN |
| Abstract |
This paper presents the impact of voltage fall time of SiC MOSFETs, applied in converters of aerospaceDC fed AC drives, on a HF conducted EMI signals. Simple frequency domain behavioral model isproposed for the use. Simulation results and real system measurements are successfully compared. Itwas shown that appropriate tuning of MOSFET voltage fall time by means of gate driver design allowsto selectively suppress common mode noise in the high frequency range. Associated EMI filter designis showing that such suggestion can be used to compensate negative impact of equivalent parallel capacitanceof the common mode chokes, leading to simplified filter structure. Resulting impact on theswitching energy loss per one commutation cycle is also discussed. |
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| Filename: | 0244-epe2016-full-18031289.pdf |
| Filesize: | 549.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
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