| |
Power cycle lifetime improvement by reducing thermal stress of a new dual HVIGBT module
| [View]
[Download]
|
| Author(s) |
SAKAI YASUHIRO |
| Abstract |
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) modules are installed in traction drive applications and large industrial motor drive applications, so they require high power density and reliability. Enhancing power density of power modules increases thermal stress and especially reduces power cycle lifetime. This paper describes the design approach for reducing thermal stress by reducing thermal resistance of the module. |
| Download |
| Filename: | 0208-epe2016-full-09552869.pdf |
| Filesize: | 704.2 KB |
|
| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
| |
 |