| Abstract |
This paper presents a comparison of the achievable submodule utilization, losses and other basic figures of merit for the design of the modular multilevel converter half bridge submodules for transmission applications. Based on those figures of merit, a method to find out the optimum semiconductor voltage level for MMC submodules in HVDC Applications for a given power and boundary condition is elucidated. Based on the boundary conditions used for the examples of this paper, 4.5 kV blocking voltage is the optimum voltage level for semiconductors at transmission power of less than 900 MW. For higher transmission power the better performance was achieved by the submodule based on the 6.5 kV IGBT. |
