| |
High Thermal Conductance AlN Power Module with Hybrid Integrated Gate Drivers and SiC Trench MOSFETs for 2 kW Single-Phase PV Inverter
| [View]
[Download]
|
| Author(s) |
Stefan MOENCH |
| Abstract |
Silicon carbide (SiC) trench MOSFET half-bridge and full-bridge power modules with hybrid integrated gate drivers on aluminium nitride (AlN) substrate were designed with electro-thermal co-simulation and soldered on an aluminium heatsink, achieving 0.3 K/W junction-to-heatsink thermal resistance. A 2 kW single-stage PV-inverter with active energy-buffer was built around the modules, achieving a weighted CEC efficiency of 95.4\% and power density of 3.14 kW/l at a switching frequency of 100 kHz. The gate driver and bootstrap circuit are hybrid integrated on the power module for low parasitic gate-loop inductance. Electro-thermal co-simulation reveals a low transient temperature ripple of 6 K during the 60 Hz grid-frequency cycles at full load. |
| Download |
| Filename: | 0322-epe2016-full-17583481.pdf |
| Filesize: | 1.235 MB |
|
| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
| |
 |