| Abstract |
In this work, the static and dynamic characteristics of a new double-trench SiC MOSFET are experimentallyinvestigated and compared to two different available commercial SiC MOSFETs. The SiC devices areapplied in a ZVZCS Phase-Shifted Full-Bridge converter which uses the parasitic leakage inductance of thetransformer to achieve soft switching. A practical method to break down the converter losses based onseparating the measured semiconductor and magnetic losses is proposed and compared to an analytical lossmodel. The experimental results show several advantages of using SiC MOSFETs as well as ZVZCS in theconverter. The main results can be summarized as elimination of the freewheeling circulating current mode,clamping the overshoot voltage across the rectifier diodes and achieving soft switching in a wide powerload range without additional auxiliary circuits or resonant inductor. Experimental results for a 10kW, (100-250) kHz prototype show an efficiency of up to 98,1\% for the whole converter. |
