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Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region
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Author(s) |
Panagiotis ASIMAKOPOULOS |
Abstract |
This work investigates the current sharing effect of a high power Soft Punch Through IGBT module in the Negative Temperature Coefficient region. The unbalanced current sharing between two of the substrates is demonstrated for different current and temperature levels and its impact on the thermal stressing of the device is evaluated. The results indicate that the current asymmetry does not lead to a significant thermal stressing unbalance between the substrates. |
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Filename: | 0305-epe2016-full-18523787.pdf |
Filesize: | 944.8 KB |
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Type |
Members Only |
Date |
Last modified 2017-04-13 by System |
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