| |
Current Mismatch in Paralleled Phases of High Power SiC Modules due to Threshold Voltage Unsymmetry and Different Gate-Driver Concepts
| [View]
[Download]
|
| Author(s) |
Roman HORFF |
| Abstract |
This paper analyzes the influence of the threshold voltage on the parallel connection of three phases of a high power SiC MOSFET module. The current mismatch and the resulting switching loss distribution between paralleled phases will be investigated.Two different gate-drive circuit concepts will be tested. The influence of the choice of the gate-resistor arrangement will be presented regarding the dynamic current distribution and switching losses. |
| Download |
| Filename: | 0233-epe2016-full-11493887.pdf |
| Filesize: | 476.2 KB |
|
| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
| |
 |