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Comparison of Driving Concepts for Silicon Carbide Bipolar Junction Transistors
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| Author(s) |
Ulf MUETER |
| Abstract |
This paper presents a comparison between conventional base driver concepts for bipolar silicon carbide transistors and an approach based on utilizing a buck-converter-IC to drive the bipolar transistor. The different concepts are simulated and compared with respect to switching performances and driving losses. The results are validated by corresponding measurements. |
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| Filename: | 0560-epe2016-full-17490208.pdf |
| Filesize: | 312.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
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