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Application of GaN Power Transistors in a 2.5 MHz LLC DC/DC Converter for Compact and Efficient Power Conversion
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| Author(s) |
Cornelius ARMBRUSTER |
| Abstract |
In this work a demonstrator with a switching frequency up to 2.5 MHz is shown. These comparatively high frequencies reduce the weight and the system costs of the resonant 3-kW-DC-DC-converter. The electrical properties of the implemented Gallium Nitride (GaN) power transistors enable high switching frequencies while maintaining high efficiency. The presented converter has a power density of approximately 3 W/cm³. The total efficiency of the converter is higher than 90 \% for all operation points above 1/5 of the nominal load. Exceptional high efficiency of 94.5 \% can be reached at ½ of the nominal load and a switching frequency of 2 MHz. Possible improvements are defined and could be reached by adding a continuous dead time control as well as adapting the driver circuit of the synchronous rectification. |
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| Filename: | 0402-epe2016-full-01415832.pdf |
| Filesize: | 507.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
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