| |
Application issues of an online temperature estimation method in a high-power 4.5 kV IGBT module based on the gate-emitter threshold voltage
| [View]
[Download]
|
| Author(s) |
Martin HOEER |
| Abstract |
A method for estimating the junction temperature based on the static and quasi-static gate-emitter thresh-old voltage has been previously presented. However, several questions that remained open, such as thephysical meaning of the estimated temperature and in_uence of external parameters in the temperatureestimation, are now addressed in this paper. If devices are paralleled the proposed method extracts thelowest threshold voltage and therefore the highest temperature. The in_uence of unequal temperaturedistribution among the dies of a 4.5 kV/1.2 kA IGBT module is investigated as well as the in_uence ofa variation of the threshold voltage of individual chips and among different modules of the same devicefamily. Additionally to these device speci_c variations the in_uence of the integrated gate resistors isinvestigated and the feasibility for an industrial application is discussed. |
| Download |
| Filename: | 0079-epe2016-full-09530388.pdf |
| Filesize: | 180 KB |
|
| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
| |
 |