| |
A Novel EMI Reduction Design Technique in IGBT gate driver for Turn-on Switching mode
| [View]
[Download]
|
| Author(s) |
Hamidreza GHORBANI |
| Abstract |
This paper proposes a novel insulated gate bipolar transistor (IGBT) gate driver. The new gate driver(GD) has positive effect on the injected gate current to enhance the IGBT switching mechanism. Theapproach is based on the Posicast control method. Simple structure is the most important advantage ofthis feedforward controller. The main objective is to improve turn-on switching transients withoutharmful effect on the IGBT efficiency. The electro-magnetic interface (EMI) reduction has beendiscussed as another important benefit of this control method. |
| Download |
| Filename: | 0276-epe2016-full-10215104.pdf |
| Filesize: | 279.4 KB |
|
| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
| |
 |