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Investigation of Using SiC MOSFET for High Temperature Applications
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| Author(s) |
Rémy Ouaida; Maxime Berthou; Pierre Brosselard; Sebastien Oge; Pascal Bevilacqua; Charles Joubert |
| Abstract |
This paper presents the performances expected by SiC MOSFETs for high temperature applications. A complete static and dynamic electrical characterization of SiC MOSFETs have been tested under varying temperature from 25°C to 250°C using suitable packaging materials. To go further, aging tests have been performed to evaluate lifetime of SiC MOSFET under switching condition up to 300°C. |
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| Filename: | Unnamed file |
| Filesize: | 460.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2017-01-18 by System |
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