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Serial connection of SiC VJFETs - features of a fast high voltage switch
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| Author(s) |
R. Elpelt; P. Friedrichs; R. Schörner; K.-O. Dohnke; H. Mitlehner; D. Stephani |
| Abstract |
We present a high voltage stacked switch (up to 8 kV / 10A), based on the serial connection of
vertical Silicon Carbide (SiC) junction field e ect transistors (VJFETs) together with a standard
power MOSFET in a cascode-like circuit. After introduction and discussion of the basic principles a
careful analysis of the static characteristics as well as the dynamical switching behavior is conducted
by means of experimental measurements together with two-dimensional device simulation. The
presented stacked switch can, in principle, be extended to any desired blocking voltage. The current
capability depends largely on the cooling e orts and the active SiC area used in each stage of
the stack. The dynamic performance of the switch also yields a very fast switching ability. Thus
unipolar SiC switches become feasible, exhibiting good on-state performance with blocking voltages
exceeding 4 kV and switching frequencies well above 10 kHz. |
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| Filename: | EPE2003-PP0777 - Elpelt |
| Filesize: | 506.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-14 by Unknown |
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