| Abstract |
Simulation models of SiC power transistors (normally on/ off SiC JFET, SiC MOSFET) are developed by means of data driven modeling with consideration of thermal effects. Temperature effects on electrical characteristics of SiC power devices are obtained from simulations and tests of static and dynamic characteristics, which solve the problem of no consideration on temperature effects when comparing between several commercial SiC power devices. It was found that different SiC transistors have their own advantages at stability of gate voltage, switching loss and so on. These analyses can be supplied to device selection and circuit design in specific application. Besides, simulation results coincide well with test results and transient junction temperature of SiC power transistors can be observed conveniently through simulation of thermoelectric coupling model. These models and simulation results could be used in applied research. |
