| |
System fault test of SiC device applied 6.6kV transformerless D-STATCOM
| [View]
[Download]
|
| Author(s) |
Yushi KOYAMA |
| Abstract |
This paper reports the investigation results for transformerless Distribution-Static SynchronousCompensator (D-STATCOM) with Modular Multilevel Converter (MMC) topology. The DSTATCOMhas cascaded Silicon-Insulated Gate Bipolar Transistor (Si-IGBT) inverter cells andSilicon Carbide-Junction Field Effect Transistor (SiC-JFET) inverter cells. SiC-JFET inverter cells areoperated with Pulse Width Modulation (PWM) since the low switching losses. The Si-IGBT invertercells have higher DC voltage than the SiC-JFET inverter cells, and they are operated with one-pulseoperation that output one positive and one negative pulses during a cycle. MMC topology and highvoltage Si-IGBT inverter cells realized connecting the D-STATCOM to 6.6 kV distribution systemwithout transformer.A prototype model of the D-STATCOM rated at 6.6 kV, 100 kVA was built and its field test wasexecuted. The experimental results prove the stable rated operation and Fault-Ride-Throughperformance. |
| Download |
| Filename: | 0023-epe2015-full-03073439.pdf |
| Filesize: | 1.607 MB |
|
| Type |
Members Only |
| Date |
Last modified 2016-06-08 by System |
| |
 |