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Transient behaviour of high voltage bipolar SiC-diodes
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| Author(s) |
W. Bartsch; H. Mitlehner; R. Schoerner; K. Dohnke; B. Thomas; R. Stein; D. Stephani |
| Abstract |
This work presents a comparison of the switching behaviour of paralleled bipolar SiC diodes with
emitters fabricated by epitaxy as well as by Aluminium implantation. The turn-off behaviour of these
devices will be discussed with respect to different DC link voltages at several junction temperatures,
rates of current decay and snappy behaviour. |
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| Filename: | EPE2003-PP0696 - Bartsch |
| Filesize: | 1.129 MB |
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| Type |
Members Only |
| Date |
Last modified 2004-01-26 by Unknown |
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