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New 1200V full SiC module with 800A rated current
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| Author(s) |
Eugen WIESNER |
| Abstract |
This paper is dealing with a newly developed high current 800A/1200V full SiC module containing SiC MOSFETs and antiparallel SiC Schottky Barrier Diodes in a half bridge configuration. Electrical characteristics and thermal performance are described and compared with Si-based IGBT modules. The dependencies of switching characteristics from specific operation conditions are investigated on. The paper concludes with a recommendation of application conditions to benefit most from such a high current full SiC module. |
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| Filename: | 0130-epe2015-full-09040663.pdf |
| Filesize: | 594.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-06-08 by System |
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