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	JBS Power-Rectifiers for 1.7 kV Applications with Conduction Properties Close to Pure Schottky-Design	[View]   [Download]
Author(s)	Holger BARTOLF
Abstract	This paper discusses an elaborated study about the design of Junction-Barrier Schottky (JBS)diodes regarding the width (w) and spacing (s) of the implanted p+ pattern, utilizing epitaxial drift-layer specifications (4H-SiC) suitable for 1.7 kV applications. The impact of the w/s design-ratio onthe blocking characteristics, the unipolar ON-state performance as well as moderation of surge currentevents are investigated. Finally, we report experimental results on successfully manufactured 1.7 kVJBS power-rectifiers demonstrating the practical validity of our numerical approach.
Download	Filename: 0659-epe2015-full-14362810.pdf Filesize: 1.346 MB
Type	Members Only
Date	Last modified 2016-06-08 by System