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Investigation of long-term parameter variations of SiC power MOSFETs
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| Author(s) |
Diane-Perle SADIK |
| Abstract |
Experimental investigations on the gate-oxide and body-diode reliability of commercially available Silicon Carbide (SiC) MOSFETs from the second generation are performed. The body-diode conduction test is performed with a current density of 50 A/cm2 in order to determine if the body-diode of the MOSFETs is free from bipolar degradation. The second test is stressing the gate-oxide. A negative bias is applied on the gate oxide in order to detect and quantify potential drifts. |
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| Filename: | 0404-epe2015-full-23343996.pdf |
| Filesize: | 883.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-06-08 by System |
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