| Abstract |
To reduce power losses, power device technologies aim at a minimized chip thickness. Therefore, it becomes more and more important that the chips are as defect-free as possible und that a method is provided to detect defects which are detrimental for such devices. In this work we show, that with further improvement of the Frequency Resolved Admittance Spectroscopy (FRAS) technique a performance is achieved to investigate wide bandgap devices. We show that FRAS is in some respect an alternative to DLTS measurements allowing identification of deep traps (their energy levels and capture cross-sections) with reduced measurement effort. This is shown on the analysis of radiation defects (deep levels) introduced in n-type 4H-SiC commercially available 1700V Schottky diodes by high energy electron and proton irradiation. This comparative analysis was performed by both FRAS and DLTS methods. |
