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Experimental evaluation of SiC BJT and SiC MOSFET in a series resonant converter.
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| Author(s) |
Georg TOLSTOY |
| Abstract |
SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to improve the efficiency of resonant converters. The losses of the full-bridge inverter are well below 1\% of the rated power at switching frequencies up to 200 kHz, making it possible to reach even higher frequencies. An experimental setup is built and two different full-bridge inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes and one with SiC BJTs and SiC Schottky diodes. |
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| Filename: | 0631-epe2015-full-00464139.pdf |
| Filesize: | 1.059 MB |
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| Type |
Members Only |
| Date |
Last modified 2016-06-08 by System |
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