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   Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions   [View] 
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 Author(s)   Maxime BERTHOU 
 Abstract   Commercial Silicon Carbide have been characterized under various configuration to assess theirmaturity and capability to replace their Silicon counterparts in 1.2kV converter applications. Static anddynamic characterization were performed between 80 and 525K. Reliability of the devices have beentested at high temperatures. Finally critical and repetitve short-circuit capability have been measured 
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Filename:0607-epe2015-full-13113731.pdf
Filesize:2.156 MB
 Type   Members Only 
 Date   Last modified 2016-06-08 by System