| |
Comparison of UCE- and RGi-based Junction Temperature Measurement of Multichip IGBT Power Modules
| [View]
[Download]
|
| Author(s) |
Marco DENK |
| Abstract |
The internal gate resistor RGi of an IGBT power module is the most promising temperature sensitive electrical parameter for real-time junction temperature measurement in a working voltage source inverter. This paper investigates RGi-based junction temperature measurement and compares it with the widespread UCE-method that is used for device characterization in laboratory setups. It is found that both methods have similar averaging properties when measuring the junction temperature of paralleled IGBT single chips. However, in case of a centered internal gate resistor the RGi-method measures a higher temperature than the area-averaging UCE-method. Especially at steep lateral temperature profiles the RGi-measured temperature is closer to the chip peak temperature than the UCE-measured one. This deviation is investigated in thermal equilibrium and during the cooling down process using thermal impedance measurement, an IR-camera and a finite element simulation. |
| Download |
| Filename: | 0031-epe2015-full-08133169.pdf |
| Filesize: | 1.282 MB |
|
| Type |
Members Only |
| Date |
Last modified 2016-06-08 by System |
| |
 |