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Behavioral Model of Gallium Nitride Normally ON Power HEMT Dedicated to Inverter Simulation and Test of Driving Strategies
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| Author(s) |
Timothé Rossignol |
| Abstract |
In this paper, the authors present a behavioral model of a GaN normally ON HEMT. Forward and reverse conductions are modelized. The modelling of both conduction modes is required to provide accurate diode-less synchronous switching-cell simulation. A dedicated transistor capacitance extraction procedure based on an analysis of turn-on and turn-off waveforms is also proposed and experimented. |
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| Filename: | 0235-epe2015-full-15452837.pdf |
| Filesize: | 1.066 MB |
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| Type |
Members Only |
| Date |
Last modified 2016-06-08 by System |
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