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An improved and low-resistive package for high-current power MOSFET
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| Author(s) |
Ralf WALTER |
| Abstract |
Over the years improved silicon technologies for low-voltage power MOSFETs have led to a very low on-resistance of the die which is now comparable or even lower than that of the device package. Modern SMD packages offer a significant reduction of the package-related resistive contribution to the overall on-resistance but are limited in the maximum useable chip size due to their small form factor. Larger dies are usually mounted into through-hole-packages or their derivatives resulting in certain limitations of their performance. In this work a new package solution especially suited for high current applications linked to high reliability requirements such as industrial motor drives or servers is discussed from the user's perspective. |
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| Filename: | 0672-epe2015-full-11233391.pdf |
| Filesize: | 2.116 MB |
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| Type |
Members Only |
| Date |
Last modified 2016-06-08 by System |
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