| Abstract |
Nowadays, there is a high demand from the power electronics market in having systems more efficientand compact. Packaging has become one of the focus factors in power electronics. With moresophisticated products being developed today, in term of Silicon device like Power MOSFETs andIGBTs, there are higher loads and stresses being put on the packaging of these semiconductormaterials. Today the silicon technology of a power transistor has reached very high integration, havingday by day a smaller die size (smaller dimensions and increased performances). So the impact of theparasitic phenomena starts to become more significant than before. In this paper, the parasitic effect ofthe internal source connection between the die and the package of IGBT will be analyzed. A newFour-lead TO-247 package for the Field stop II IGBT has been will be introduced. The advantage ofthe kelvin connection will be validated against the normal TO-247 in a 4kW Double-switch-forwardconverterprototype. A comparison will be shown between a conventional TO-247 and an innovativeone that allows withdrawing the effect of the parasitic source inductance. |
