| Abstract |
Despite an enormous amount of publications on power semiconductor modeling,
circuit simulation packages (Saber, Pspice e.g.) still lack of accurate power semiconductor
models. Available models need a large number of parameters; but not all of them, like doping
profile, active area, can easily be extracted through measurements.
It is shown that current sharing and power losses between paralleled semiconductor devices can
be analyzed using piecewise linear models. The method presented is highly accurate with an
error of less than five percents. The necessary parameters for these models can be extracted
through measurements.
Following this approach, the behavior of a power electronic systems including paralleled chips,
IGBT/diode modules or intelligent power modules (IPM) can be efficiently predicted. |
