| Abstract |
For some years energy conversion equipment has been made with power MOS transistors. They are easy to implement particularly by voltage control on the gate, and their natural robustness favoured using them at the expense of bipolar transistors. Trondheim The most vulnerable part of a Power MOS is the thin oxide (80 to 110 nm) located below the polysilicon gate. The quality of this oxide (dimensional homogeneity and intrinsic quality) is a significant parameter for evaluating the manufacturer's know-how and product quality. After an overview of the oxide degradation mechanism and different techniques available for making this characterization, this paper shows the results on devices from four manufacturers, using the ramp voltage test. These results make it possible to estimate the defect number by unit area of oxide for each manufacturer and to give the linked failure rate. |
