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AN EFFICIENT JUNCTION TERMINATION TECHNIQUE: THE BIASED RING STRUCTURE
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| Author(s) |
C. Mingues; D. Krizaj; G. Charitat |
| Abstract |
The paper presents analysis of a Biased Ring junction termination structure. This technique is used for efficient improvement of planar pn junction breakdown properties. A major drawback of this technique is a possibility of local reach-through between the rings, increasing the leakage current and the softness of the breakdown characteristics. An optimized design
with decaying width and increased distance between the spiral turns (rings)
leads to close to ideal breakdown voltage as confirmed by device modeling as well as experimental results. The influence of the ring spacing and surface.
charge density on breakdown properties is discussed. Breakdown voltage of a
Biased Ring termination has been found insensitive to and even improving at
increased oxide charge density. |
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| Filename: | Unnamed file |
| Filesize: | 483.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-01-05 by System |
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