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OPTIMISATION OF THE REVERSE RECOVERY BEHAVIOUR OF FAST POWER DIODES USING INJECTION EFFICIENCY AND LIFETIME CONTROL TECHNIQUES
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| Author(s) |
M. T. Rahimo; N. Y. A. Shammas |
| Abstract |
In this paper, the effects of the P emitter doping level and depth on the diode
reverse recovery behaviour and snappy recovery are investigated. The work has been carried out by means of simulation using the ETH/ise TCAD simulation package. Results have shown that the diode voltage would snap during the recovery phase at higher P emitter
doping levels and diffusion depths under the same operating conditions. The forward voltage drop was kept at a constant value by varying the minority carrier lifetime for each set of specifications. From the results obtained, design optimization shows that lower emitter doping levels and depths combined with an increase in the lifetime value will effectively reduce all reverse recovery parameters, with softer recovery characteristics, lower leakage current while maintaining the same forward voltage drop. |
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| Filename: | Unnamed file |
| Filesize: | 579 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-01-05 by System |
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