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Optical and electrical measurement of bulk recombination lifetime regardless of surface conditions
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| Author(s) |
Antonello Cutolo; Santolo Daliento; Andrea Irace; Annunziata Sanseverino; Paolo Spirito; Luigi Zeni |
| Abstract |
In this paper two different techniques for the measurement of recombination
lifetime in silicon arc compared. The same bulk silicon sample has been characterized by means of an interferometric contactless method and an electronic measurement technique.
Both methods have been capable of detecting the bulk lifetime value regardless the different boundary conditions and the experimental results obtained with the different methods show an excellent agreement. |
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| Filename: | Unnamed file |
| Filesize: | 247.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-01-05 by System |
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