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RECOMBINATION LIFETIME DEGRADATION IN THERMALLY STRESSED N-TYPE BULK SILICON WAFER
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| Author(s) |
A. Cutolo; S. Daliento; A. Irace; P. Spirito; L. Zeni |
| Abstract |
The effect of thermal stresses on the recombination process in bulk N-type silicon wafers has been investigated by means of a novel contactless technique. Different parameters such as heating and cooling gradients and maximum heating temperature have been studied and a significative reduction of bulk recombination lifetime has been found for high temperatures and steep cooling gradients. Moreover it has been found that slow cooling gradients, in the range of 100°C/h, do not affect the combination process in a relevant way. |
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| Filename: | Unnamed file |
| Filesize: | 255.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-01-05 by System |
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