| Abstract |
A modified Silicon Direct Bonding technology was developed allowing to obtain low dislocation density and void free interfaces in the course of the fabrication of power devices. With a novel technique a contact between smooth and regularly grooved surfaces of silicon wafers was realized. Structural quality of directly bonded surface grooved compositions was revealed. The innovation was based on the fact that, due to dislocation peculiar tendency to move to free surfaces, they can be collected by the inter-facial
grooves. The relevant calculations of the dislocation behavior were made. Electrical properties of bonded structures with regularly grooved interfaces were investigated, and suitability of developed technique for semiconductor device manufacturing was demonstrated. Continuously bonded surface grooved diodes, n-p-n bipolar transistors,
buried grid gate turn off thyristors and n-p-n-p reverse Switch-on dynistors were fabricated and examined. The design of a buried gate static induction device based on the developed technology was proposed. |
