| Abstract |
Fast recovery silicon rectifiers have at high junction operating temperature, a leakage reverse current significantly higher than similar standard rectifiers. Experimental electrical characteristics for both electron irradiated and gold diffused diodes have been analyzed in
comparison with the characteristics of similar standard diodes. A 10 A silicon rectifier diode which is competitive with similar commercial devices available now on the market has been used as test device. It is shown that near the room temperature, fast recovery silicon rectifiers have a reverse leakage current dominated by the junction peripheral surface component and not by the bulk generation component. Towards the maximum junction operating
temperature, the reverse current of fast diodes is dominated by the bulk component but a surface component, at least as large as the total reverse current of similar standard diodes is still present. Consequently, fast recovery rectifiers have to operate at a lower junction temperature and reverse voltage in order to be avoided a device failure. |
