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   On the Application of Novel High Temperature Oxidation Processes to Enhance the Performance of High Voltage Silicon Carbide PiN Diodes   [View] 
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 Author(s)   Craig FISHER, Michael JENNINGS, Dean HAMILTON, Stephen THOMAS, Yogesh SHARMA, Peter GAMMON, Susan BURROWS, Philip MAWBY 
 Abstract   In this paper, the application of a combined high temperature (1550_C) thermal oxidation / annealing process has been applied to 4H-SiC PiN diodes with 110 #956;m thick n-type drift regions, for the pur- pose of increasing the carrier lifetime in the semiconductor. PiN diodes were fabricated on lifetime- enhanced 4H-SiC material, then were electrically characterised and compared against fabricated control sample PiN diodes. Forward current-voltage (I-V) measurements showed that the lifetime-enhanced de- vices typically had around 15\% lower forward voltage drop and 40\% lower differential on-resistance (at 100 A/cm2 and 25_C) when compared against control sample PiN diodes. Reverse I-V measurements indicated that the reverse leakage current was strongly dependent on the active area, and hence perimeter- to-area ratio, of the fabricated devices, though large-area PiN diodes were measured to have a reverse leakage current density of around 1 nA/cm2 (at 100 V reverse bias). Analysis of reverse recovery characteristics illustrated the excellent transient characteristics of both types of fabricated device, though, as expected from the increased carrier lifetime, the lifetime-enhanced PiN diodes had around 22\% higher reverse recovery charge. The minority carrier lifetime was also extracted from reverse recovery characteristics; PiN diodes fabricated on the lifetime-enhanced 4H-SiC material were found to have a carrier lifetime over 35\% higher than the control sample devices. Analysis of the overall power losses of both types of device found that the lifetime-enhanced PiN diodes typically dissipated around 40\% less energy over the complete switching cycle than the control sample PiN diodes at 25_C. 
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Filename:0078-epe2014-full-16550475.pdf
Filesize:1.984 MB
 Type   Members Only 
 Date   Last modified 2015-06-08 by System