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New Aspects on Analyzing ZVS Conditions for Converters Using Super-junction Si and Wide Bandgap SiC and GaN Power FETs
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| Author(s) |
Rais MIFTAKHUTDINOV |
| Abstract |
Paper analyzes substantial Coss behavior differences of FETs using super-junction Si, SiC and GaN technologies versus traditional Si process and suggests new practical models for power losses optimization. These models applied to derive normalized ZVS conditions and boundaries for popular PWM ZVS topologies allowing efficiency optimization at wide operating conditions. |
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| Filename: | 0552-epe2014-full-05002153.pdf |
| Filesize: | 262.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2015-06-08 by System |
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