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Investigation of 1.2 kV SiC MOSFETs for Hard- and Soft-Switching Converters
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| Author(s) |
Abdullah EIAL AWWAD, Paul BIRGEL, Sibylle DIECKERHOFF |
| Abstract |
In this paper, current silicon carbide (SiC) MOSFETs from two different manufacturers are evaluated including static and dynamic characteristics for different gate resistances, different load currents and at various temperatures. These power semiconductors are operated continuously at a high switching frequency of 1MHz comparing a hard- and a soft-switching converter. A calorimetric power loss measurement method is realized in order to achieve a good measurement accuracy, and the results are compared to the electrical measurements. |
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| Filename: | 0481-epe2014-full-20025612.pdf |
| Filesize: | 1.442 MB |
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| Type |
Members Only |
| Date |
Last modified 2015-06-08 by System |
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