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Experimental Analysis of Bipolar SiC-Devices for Future Electrical Energy Distribution Systems
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| Author(s) |
Andreas HUERNER, Heinz MITLEHNER, Tobias ERLBACHER, Anton BAUER, Lothar FREY |
| Abstract |
In this study, the electrical performance of a bipolar switch (BiFET) fabricated on 4H-SiC proposed as solid state circuit breaker is discussed. Therefore, first results on the output and blocking characteristic are presented and analyzed. The bipolar switch indicates a current limiting output characteristic and robust behavior in off-state mode. Nevertheless, further improvement of the conduction properties by increasing the doping concentration in the p-type channel region has to be carried out. Furthermore, it is determined that for a clear understanding of the temperature dependency of the output characteristic, further investigations concerning the influence of the incomplete ionization, ambipolar lifetime, and emitter efficiency are mandatory. |
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| Filename: | 0253-epe2014-full-08164316.pdf |
| Filesize: | 1.005 MB |
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| Type |
Members Only |
| Date |
Last modified 2015-06-08 by System |
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