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Design Issues of the High-Frequency Interleaved DC/DC Boost Converter with Silicon Carbide MOSFETs
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| Author(s) |
Mariusz ZDANOWSKI, Jacek RABKOWSKI, Roman BARLIK |
| Abstract |
This paper discusses design issues of the high-frequency, four-leg interleaved DC/DC boost converter. The main aim of this design is to fit the 6kW/650V converter prototype within volume of 1 dm3 having at the same time efficiency above 98\%. Low switching energies of applied SiC MOSFETs and Schottky diodes offer operation of each leg at high switching frequency up to 130 kHz. Together with a phase-shift by 90° this leads to input/output current frequency multiplication over 0.5MHz. Such a high frequencies result in a significant reduction of the passive components, especially input inductors. The paper contains discussion of the converter operation and special solution the MOSFET gate drivers with CPLD logic. A design study regarding SiC semiconductors, heatsink, inductors is also provided. All issues are illustrated by simulation and experimental results. |
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| Filename: | 0357-epe2014-full-13421856.pdf |
| Filesize: | 1.704 MB |
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| Type |
Members Only |
| Date |
Last modified 2015-06-08 by System |
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