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An experimental analysis of how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter.
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| Author(s) |
Georg TOLSTOY, Per RANSTAD, Juan COLMENARES, Dimosthenis PEFTITSIS, Florian GIEZENDANNER, Jacek RABKOWSKI, Hans-Peter NEE |
| Abstract |
Active control of the dead-time in a SLR converter is in this paper shown to be of great importance. Theefficiency of the full-bridge will increase if the dead-time control is made in the right way. Differentcontrol algorithms are shown to work well for different power switches. For the SiC MOSFET and theSiC BJT the control algorithms are tested experimentally. |
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| Filename: | 0543-epe2014-full-21442788.pdf |
| Filesize: | 1.184 MB |
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| Type |
Members Only |
| Date |
Last modified 2015-06-08 by System |
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