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Electro-Thermal Behaviour of a SiC JFET Stressed by Lightning Induced Over-Voltages
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| Author(s) |
Dominique Bergogne; Cyril Buttay; Rémi Robutel; Fabien Dubois; Rémy Ouaida; Hervé Morel |
| Abstract |
SiC JFETs are experimentally tested to verify their robustness against lightning induced strokes. The experimental setup
is fully described. A lightning surge generator is built and a SiC JFET is stressed. The full thermal response of the SiC JFET internal temperature is obtained from an specific temperature estimation technique at different time steps during the surge test. This short time thermal response is compared and validated by a conventional 1D thermal model. This work shows that for a moderate lightning stroke, according to standards [1], the JFET temperature rise is less than 60 °C, which is acceptable in most circumstances. |
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| Filename: | Unnamed file |
| Filesize: | 306.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-27 by System |
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