| Abstract |
A novel approach is presented for detecting bond wire lift-off in power semiconductor
devices while they are in operation [1]. The aim is to improve the reliability of power electronic
systems. The diagnostic functionality presented makes use of specific bond assemblies and integrated
subcircuits, e.g. as part of the gate driver in IPMs, and serves to detect bond wire lift-off in power
devices. In power semiconductor modules without base plate, the end-of-life phenomenon of bond
wire lift-off is typically the final failure mechanism, either as a primary failure mechanism or as a
secondary failure because of solder fatigue. The loss of electrical contact, and therefore the loss of
controllability and blocking capability, is a great problem, still not solved by any protection concepts
so far made known. Monitoring the onset of the end-of-life phase and implementing redundancy in the
system will prevent the power semiconductor module from going abruptly into failure mode, so that
the destruction of devices is safely avoided. |
