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Novel Copper Metallization on Silicon Carbide electronic Devices enabling increased Packaging Lifetime and higher Junction-Temperatures
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| Author(s) |
Tim BEHRENS, Thomas SUENNER, Thomas KADEN, Adam TOKARSKI, Andreas SCHLETZ, Lothar FREY |
| Abstract |
While aluminum-based metallization schemes on Si and corresponding top-side connections via Al-bonds have been optimized for the last decades and are well understood today, only few investigations have been done on the interaction of thick Cu wire-bonds and copper-metallizations on SiC. In this work the mechanical as well as the electrical interactions of copper-metallization schemes have specially been analyzed and optimized for SiC-devices in high reliability applications. By utilizing temperature storage as well as active and passive temperature cycles at temperatures above 200°C it has been proven, that this metallization together with corresponding Cu-bond connections can enable higher junction-temperatures for SiC power electronic devices. |
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| Filename: | 0696-epe2013-full-21114149.pdf |
| Filesize: | 1.199 MB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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